optocoupler, phototransistor output, with base connection www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83606 214 rev. 1.6, 10-dec-05 cny17 vishay semiconductors description the cny17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon npn phototransitor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the cny17 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as crt modulation. features ? isolation test voltage 5300 v rms ? long term stability ? industry standard dual-in-line package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? underwriters lab file no. e52744 system code h or j ? din en 60747-5-5 (vde 0884) ? bsi iec 60950, iec 60065 ?fimko note for additional information on the availabl e options refer to option information. i179004 1 2 3 6 5 4 b c e a c n c order information part remarks cny17-1 ctr 40 % to 80 %, dip-6 cny17-2 ctr 63 % to 125 %, dip-6 cny17-3 ctr 100 % to 200 %, dip-6 cny17-4 ctr 160 % to 320 %, dip-6 cny17-1x006 ctr 40 % to 80 %, dip-6 400 mil (option 6) CNY17-1X007 ctr 40 % to 80 %, smd-6 (option 7) cny17-1x009 ctr 40 % to 80 %, smd-6 (option 9) cny17-2x006 ctr 63 % to 125 %, dip-6 400 mil (option 6) cny17-2x007 ctr 63 % to 125 %, smd-6 (option 7) cny17-2x009 ctr 63 % to 125 %, smd-6 (option 9) cny17-3x006 ctr 100 % to 200 %, dip-6 400 mil (option 6) cny17-3x007 ctr 100 % to 200 %, smd-6 (option 7) cny17-3x009 ctr 100 % to 200 %, smd-6 (option 9) cny17-4x006 ctr 160 % to 320 %, dip-6 400 mil (option 6) cny17-4x007 ctr 160 % to 320 %, smd-6 (option 7) cny17-4x009 ctr 160 % to 320 %, smd-6 (option 9) absolute maximum ratings parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma surge current t 10 s i fsm 2.5 a power dissipation p diss 100 mw
document number: 83606 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-05 215 cny17 optocoupler, phototransistor output, with base connection vishay semiconductors note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximu m ratings can cause permanent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time can adversely affect reliability. note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requier ements. typical values are characteristic s of the device and are the result of en gineering evaluations. typical values are for information onl y and are not part of the testing requirements. output collector emitter breakdown voltage bv ceo 70 v emitter base breakdown voltage bv ebo 7v collector current i c 50 ma t < 1.0 ms i c 100 ma power dissipation p diss 150 mw coupler isolation test voltage between emitter and detector t = 1 s v iso 5300 v rms creepage distance 7mm clearance distance 7mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c absolute maximum ratings parameter test condition symbol value unit electrical characteristcs parameter test condition part symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 ma v br 6v reverse current v r = 6 v i r 0.01 10 a capacitance v r = 0 v, f = 1 mhz c o 25 pf thermal resistance r th 750 k/w output collector emitter capacitance v ce = 5 v, f = 1 mhz c ce 5.2 pf collector base capacitance v cb = 5 v, f = 1 mhz c cb 6.5 pf emitter base capacitance v eb = 5 v, f = 1 mhz c eb 7.5 pf thermal resistance r th 500 k/w coupler collector emitter, saturation voltage v f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf collector emitter, leakage current v ce = 10 v cny17-1 i ceo 250na cny17-2 i ceo 250na cny17-3 i ceo 5 100 na cny17-4 i ceo 5 100 na
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83606 216 rev. 1.6, 10-dec-05 cny17 vishay semiconductors optocoupler, phototransistor output, with base connection note current transfer ratio and co llector-emitter leakage current by dash number (t amb c). current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 10 ma cny17-1 ctr 40 80 % cny17-2 ctr 63 125 % cny17-3 ctr 100 200 % cny17-4 ctr 160 320 % v ce = 5 v, i f = 1 ma cny17-1 ctr 13 30 % cny17-2 ctr 22 45 % cny17-3 ctr 34 70 % cny17-4 ctr 56 90 % switching characteristics parameter test condition part symbol min. typ. max. unit linear operation (without saturation) turn-on time i f = 10 ma, v cc = 5 v, r l = 75 t on 3s rise time i f = 10 ma, v cc = 5 v, r l = 75 t r 2s turn-off time i f = 10 ma, v cc = 5 v, r l = 75 t off 2.3 s fall time i f = 10 ma, v cc = 5 v, r l = 75 t f 2s cut-off frequency i f = 10 ma, v cc = 5 v, r l = 75 f co 250 khz switching operation (with saturation) turn-on time i f = 20 ma cny17-1 t on 3s i f = 10 ma cny17-2 t on 4.2 s cny17-3 t on 4.2 s i f = 5 ma cny17-4 t on 6s rise time i f = 20 ma cny17-1 t r 2s i f = 10 ma cny17-2 t r 3s cny17-3 t r 3s i f = 5 ma cny17-4 t r 4.6 s turn-off time i f = 20 ma cny17-1 t off 18 s i f = 10 ma cny17-2 t off 23 s cny17-3 t off 23 s i f = 5 ma cny17-4 t off 25 s fall time i f = 20 ma cny17-1 t f 11 s i f = 10 ma cny17-2 t f 14 s cny17-3 t f 14 s i f = 5 ma cny17-4 t f 15 s
document number: 83606 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-05 217 cny17 optocoupler, phototransistor output, with base connection vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - linear operation (without saturation) fig. 2 - switching operation (with saturation) fig. 3 - current transfe r ratio vs. diode current fig. 4 - current transfer ratio vs. diode current fig. 5 - current transfer ratio vs. diode current fig. 6 - current transfer ratio vs. diode current icny17_01 r l = 75 v cc = 5 v i c 47 i f i f 1 k v cc = 5 v 47 icny17_02 ( % ) 1000 1 2 3 4 100 10 1 0.1 10 1 i f (ma) icny17_03 (t a = - 25 c, v ce = 5 v ) i c /i f = f (i f ) i c i f 1 2 3 4 icny17_04 ( % ) 1000 100 10 1 0.1 10 1 i f (ma) (t a = 0 c, v ce = 5 v ) i c /i f = f (i f ) i c i f 1 2 3 4 icny17_05 ( % ) 1000 100 10 1 0.1 10 1 i f (ma) (t a = 25 c, v ce = 5 v ) i c /i f = f (i f ) i c i f 1 2 3 4 icny17_06 ( % ) 1000 100 10 1 0.1 10 1 i f (ma) (t a = 50 c, v ce = 5 v ) i c /i f = f (i f ) i c i f
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83606 218 rev. 1.6, 10-dec-05 cny17 vishay semiconductors optocoupler, phototransistor output, with base connection fig. 7 - current transfer ratio vs. diode current fig. 8 - current transfer ra tio (ctr) vs. temperature fig. 9 - transistor characteristics fig. 10 - output characteristics fig. 11 - forward voltage fig. 12 - collector em itter off-state current 1 2 3 4 icny17_07 ( % ) 1000 100 10 1 0.1 10 1 i f (ma) (t a = 75 c, v ce = 5 v ) i c /i f = f (i f ) i c i f - 25 75 25 050 t a (c) icny17_0 8 1 2 3 4 ( % ) 1000 100 10 (i f = 10 ma, v ce = 5 v ) i c /i f = f (t) i c i f 30 25 10 20 15 0 015 10 5 5 i c (ma) v ce ( v ) icny17_09 i b = 10 a i b = 15 a i b = 20 a i b = 40 a i b = 2 a i b = 5 a i c = f ( v ce ) i f = 0 40 30 10 20 0 015 10 5 i c v ce ( v ) icny17_10 i f = 14 ma i f = 12 ma i f = 10 ma i f = 7 ma i f = 5 ma i f = 2 ma i f = 1 ma i c = f ( v ce ) 1.2 1.1 1.0 0.9 0.1 10 100 1 v f ( v ) i f (ma) icny17_11 v f = f (i f ) 25 c 50 c 75 c 1 0.1 0.01 0.001 0c 25 50 75 100 i ceo ( a) ta icny17_12 v ce = 12 v v ce = 35 v i ceo = f ( v ,t) (i f = 0)
document number: 83606 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-05 219 cny17 optocoupler, phototransistor output, with base connection vishay semiconductors fig. 13 - saturation voltage vs. collector current and modulation depth cny17-1 fig. 14 - saturation voltage vs. collector current and modulation depth cny17-2 fig. 15 - saturation voltage vs. collector current and modulation depth cny17-3 fig. 16 - saturation voltage vs. collector current and modulation depth cny17-4 fig. 17 - permissible power di ssipation for transistor and diode 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 v ce sat i c (ma) icny17_13 i f = 3 x i c v cesat = f (i c ) 0 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 v ce sat ( v ) i c (ma) icny17_14 i f = 2 x i c i f = 3 x i c v cesat = f (i c ) 0 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 v ce sat ( v ) i c (ma) icny17_15 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) 1.0 0.9 0. 8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 v ce sat ( v ) i c (ma) icny17_16 i f = 2 x i c i f = 3 x i c i f = i c v cesat = f (i c ) 0 50 100 150 200 0 50 100 75 25 p tot (m w ) t a (c) icny17_1 8 p tot = f (t a ) transistor diode
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83606 220 rev. 1.6, 10-dec-05 cny17 vishay semiconductors optocoupler, phototransistor output, with base connection package dimensions in inches (millimeters) i17 8 004 0.010 (0.25) typ. 0.114 (2.90) 0.130 (3.0) 0.130 (3.30) 0.150 (3. 8 1) 0.031 (0. 8 0) min. 0.300 (7.62) typ. 0.031 (0. 8 0) 0.035 (0.90) 0.100 (2.54) typ. 0.039 (1.00) min. 0.01 8 (0.45) 0.022 (0.55) 0.04 8 0.022 (0.55) 0.24 8 (6.30) 0.256 (6.50) 0.335 ( 8 .50) 0.343 ( 8 .70) pin one id 6 5 4 1 2 3 1 8 3 to 9 0.300 to 0.347 (7.62 to 8 . 8 1) 4 typ. iso method a (0.45) min. 0.315 ( 8 .00) 0.020 (0.51 ) 0.040 (1.02 ) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03 ) 0.012 (0.30 ) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0(4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 1 8 450
document number: 83606 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 10-dec-05 221 cny17 optocoupler, phototransistor output, with base connection vishay semiconductors ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve t he performance of our products, processes, distribution and o perating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances in to the atmosphere whic h are known as ozone depleting substances (odss). the montreal protocol (1987) a nd its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. vari ous national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of co ntinuous improvements to elim inate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify t hat our semiconductors are not manufactured with ozone dep leting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating para meters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, dam ages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death as sociated with such unint ended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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